smd type ic www.kexin.com.cn 1 smd type transistors 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 1. gate 2. source 3. drain p-channel 150-v (d-s) mosfet KI2325DS features trenchfet power mosfet ultra low on-resistance small size absolute maximum ratings ta = 25 parameter symbol 5 sec steady state unit drain-source voltage v ds v gate-source voltage v gs v continuous drain current(t j =150 )*1,2t a =25 ------------------------------------------------ t a =70 i d -0.69 -0.55 -0.53 -0.43 a pulsed drain current i dm a continuous source current (diode conduction) *1,2 i s -1.0 -0.6 a single-pluse avalanche current l = 1 0 mh i as single-pulse avalanche energy l = 1 0 mh e as power dissipation *1 ,2 t a =25 ------------------------------------------------- t a =70 p d 1.25 0.8 0.75 0.48 w jumction temperature t j storage temperature t stg *1 surface mounted on 1" x 1" fr4 board. *2 pulse width limited by maximum junction temperature. mj -55to+150 -150 20 -1.6 150 4.5 1.01 thermal resistance ratings ta = 25 parameter symbol typical maximum unit maximum junction-to-ambient * t 5sec 75 100 maximum junction-to-ambient steady state 120 166 maximum junction-to-foot (drain) steady state r thjf 40 50 * surface mounted on 1" x 1" fr4 board. r thja /w
www.kexin.com.cn 2 smd type ic smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain-source breakdown voltage v (br)dss v gs =0v,i d = -250 a -150 gate threshold voltage v gs(th) v ds =v gs ,i d = -250 a -2.5 -4.5 gate-body leakage i gss v ds =0v,v gs = 20 v 100 na v ds = -150v, v gs =0v -1 v ds = -150 v, v gs =0v,t j =55 -10 on-state drain current i d(on) v ds -15 v, v gs = -10v -1.6 a v gs =-10v,i d =-0.5a 1.0 1.2 v gs =-6.0v,i d = -0.5 a 1.05 1.3 forward transconductance * g fs v ds =-15v,i d =-0.5a 2.2 s diode forward voltage * v sd i s =-1.0a,v gs = 0 v 0.7 -1.2 v total gate charge q g 7.7 12 gate-source charge q gs 1.5 gate-drain charge q gd 2.5 gate resistance r g f=1.0mhz 9 input capacitance c iss 340 510 output capacitance c oss 30 reverse transfer capacitance c rss 16 t d(on) 711 t r 11 17 t d(off) 16 25 t f 11 17 body diode reverse recovery charge q rr i f =0.5a,d i /d t =100a/ s 90 135 nc * pulse test: pw 300 s duty cycle 2%. v ds = -75v ,v gs =10v,i d =-0.5a v ds = -25v ,v gs =0,f=1mhz v dd = -75v , r l =75 , i d =-1a,v gen =- 10v , r g =6 pf nc v turn-off time turn-on time zero gate voltage drain current i dss a r ds(on) drain-source on-state resistance * ns KI2325DS marking marking d5
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